Truesemi TSA65R190S3

Truesemi · FETs & Power MOSFETs · MPN TSA65R190S3

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Specifications

Gate Charge(Qg)36.5nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
RDS(on)190mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 650V 20A 250W Through Hole TO-3P

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