Truesemi · FETs & Power MOSFETs · MPN TSA65R190S3
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| Gate Charge(Qg) | 36.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 650V 20A 250W Through Hole TO-3P