Truesemi TSA65N25M

Truesemi · FETs & Power MOSFETs · MPN TSA65N25M

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Specifications

Gate Charge(Qg)115nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)593pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation198W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)50mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.05nF
TypeN-Channel

Technical details

N-Channel 250V 65A 198W Through Hole TO-3P

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