Truesemi TSA50N20M

Truesemi · FETs & Power MOSFETs · MPN TSA50N20M

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Specifications

Gate Charge(Qg)244nC@10V
Configuration-
Drain to Source Voltage200V
Output Capacitance(Coss)437pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)46mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.01nF

Technical details

N-Channel 200V 50A 300W Through Hole TO-3P

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