Truesemi TSA35N50M

Truesemi · FETs & Power MOSFETs · MPN TSA35N50M

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Specifications

Gate Charge(Qg)142nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)35A
Output Capacitance(Coss)520pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation500W
RDS(on)155mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 N-channel
Input Capacitance(Ciss)6.97nF
TypeN-Channel

Technical details

N-Channel 500V 35A 500W Through Hole TO-3P

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