Truesemi TSA20N65MR

Truesemi · FETs & Power MOSFETs · MPN TSA20N65MR

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Specifications

Gate Charge(Qg)65nC
Drain to Source Voltage650V
Output Capacitance(Coss)264pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation192W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)480mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.15nF
TypeN-Channel

Technical details

N-Channel 650V 20A 192W Through Hole TO-3P-3

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