Truesemi TSA18N50MD

Truesemi · FETs & Power MOSFETs · MPN TSA18N50MD

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation235W
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)370mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

N-Channel 500V 18A 235W Through Hole TO-3P

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