Tritech-MOS · FETs & Power MOSFETs · MPN TMN2006MI
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| Gate Charge(Qg) | 5.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 58.5pF |
| RDS(on) | 18mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 358pF |
20V 400mV 18mΩ@4.5V 1 N-channel SOT-23-3L Single FETs, MOSFETs RoHS