Tritech-MOS TMN10010S

Tritech-MOS · FETs & Power MOSFETs · MPN TMN10010S

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)10A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)88mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)610pF

Technical details

N-Channel 100V 10A Surface Mount SOP-8

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