Tritech-MOS · FETs & Power MOSFETs · MPN TMN10010MSI
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| Gate Charge(Qg) | 16.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 31pF |
| Current - Continuous Drain(Id) | 10A |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 75mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.008nF |
| Type | N-Channel |
100V 10A 2.9V 2.5W 75mΩ@10V 1 N-channel N-Channel SOT-223-3L Single FETs, MOSFETs RoHS