Tritech-MOS · FETs & Power MOSFETs · MPN TMN10010DF
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| Gate Charge(Qg) | 8.8nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| RDS(on) | 95mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.514nF |
N-Channel 100V Surface Mount DFN3x3-8L