Tritech-MOS · FETs & Power MOSFETs · MPN TMN10003MI
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| Gate Charge(Qg) | 5.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 200mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 440pF |
100V 3A 1.1V 200mΩ@10V 1 N-channel SOT-23-3L Single FETs, MOSFETs RoHS