Tritech-MOS TMGN10080D

Tritech-MOS · FETs & Power MOSFETs · MPN TMGN10080D

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)511pF
Current - Continuous Drain(Id)80A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)7.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
Vgs±20V

Technical details

N-Channel 100V 80A Surface Mount TO-252-3L

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