Tritech-MOS TMGN10008SI

Tritech-MOS · FETs & Power MOSFETs · MPN TMGN10008SI

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Specifications

Gate Charge(Qg)4.3nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)28.9pF
Current - Continuous Drain(Id)8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)1.4pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)206pF

Technical details

N-Channel 100V 8A Surface Mount SOT-89-3L

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