Tritech-MOS TMG60N04DF

Tritech-MOS · FETs & Power MOSFETs · MPN TMG60N04DF

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Specifications

Gate Charge(Qg)5.8nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)193pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)6.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.69nF
TypeN-Channel

Technical details

N-Channel 40V 60A Surface Mount PDFN3x3-8L

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