Tritech-MOS TMG100N04P

Tritech-MOS · FETs & Power MOSFETs · MPN TMG100N04P

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Specifications

Gate Charge(Qg)6.1nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)758pF
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)3.1mΩ@10V;4.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

N-Channel 40V 100A Through Hole TO-220AB

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