Tritech-MOS TMG05N10AI

Tritech-MOS · FETs & Power MOSFETs · MPN TMG05N10AI

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Specifications

Gate Charge(Qg)4.3nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.95V
Pd - Power Dissipation1W
RDS(on)95mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)21.4pF
Number1 N-channel
Input Capacitance(Ciss)196pF

Technical details

N-Channel 100V 5A 1W Surface Mount SOT-23

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