Tritech-MOS TM60N04D

Tritech-MOS · FETs & Power MOSFETs · MPN TM60N04D

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Specifications

Gate Charge(Qg)31.2nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)60A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)146pF
RDS(on)7.8mΩ@10V;13mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.26nF
TypeN-Channel

Technical details

N-Channel 40V Surface Mount TO-252-3L

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