Tritech-MOS TM50N06P

Tritech-MOS · FETs & Power MOSFETs · MPN TM50N06P

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Specifications

Gate Charge(Qg)48nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.9nF
TypeN-Channel

Technical details

N-Channel 60V 50A Through Hole TO-220AB

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