Tritech-MOS TM50N06AD

Tritech-MOS · FETs & Power MOSFETs · MPN TM50N06AD

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Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)185pF
Current - Continuous Drain(Id)48A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation87.7W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.698nF
TypeN-Channel

Technical details

N-Channel 60V 48A 87.7W Surface Mount TO-252-3L

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