Tritech-MOS TM50G04GD

Tritech-MOS · FETs & Power MOSFETs · MPN TM50G04GD

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Specifications

Gate Charge(Qg)25nC@4.5V;22.2nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)230pF;220pF
Current - Continuous Drain(Id)55A
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)148pF;127pF
RDS(on)4.2mΩ@10V;11mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)2.38nF;2.557nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 40V 55A Surface Mount TO-252-4L

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