Tritech-MOS TM4485

Tritech-MOS · FETs & Power MOSFETs · MPN TM4485

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)235pF
Current - Continuous Drain(Id)11A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)15mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.5nF
TypeP-Channel

Technical details

P-Channel 40V 11A Surface Mount SOP-8

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