Tritech-MOS TM30G03DF

Tritech-MOS · FETs & Power MOSFETs · MPN TM30G03DF

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Specifications

Gate Charge(Qg)13nC@10V;50nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)110pF;150pF
Current - Continuous Drain(Id)30A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)92pF;135pF
RDS(on)9mΩ@10V;19mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)580pF;1.15nF
TypeN-Channel + P-Channel

Technical details

30V 30A 2.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel PDFN3x3-8L Single FETs, MOSFETs RoHS

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