Tritech-MOS TM25G04GD

Tritech-MOS · FETs & Power MOSFETs · MPN TM25G04GD

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)15.7nC;15nC
Output Capacitance(Coss)95pF;98pF
Current - Continuous Drain(Id)25A;23A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation32.9W
Reverse Transfer Capacitance (Crss@Vds)60pF;72pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)815pF;668pF
TypeN-Channel + P-Channel

Technical details

40V 2V 32.9W 1 N-Channel + 1 P-Channel N-Channel + P-Channel TO-252-3L Single FETs, MOSFETs RoHS

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