Tritech-MOS TM2012A

Tritech-MOS · FETs & Power MOSFETs · MPN TM2012A

No reviews yet — be the first to review Tritech-MOS TM2012A.

Specifications

Gate Charge(Qg)10.5nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation2.25W
RDS(on)12mΩ@4.5V;17mΩ@2.5V;28mΩ@1.8V
Reverse Transfer Capacitance (Crss@Vds)105pF
Number1 N-channel
Input Capacitance(Ciss)700pF

Technical details

N-Channel 20V 10A 2.25W Surface Mount SOP-8

Related FETs & Power MOSFETs