Tritech-MOS TM10P06D

Tritech-MOS · FETs & Power MOSFETs · MPN TM10P06D

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Specifications

Gate Charge(Qg)5.85nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)51pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation25W
RDS(on)100mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)34pF
Number1 P-Channel
Input Capacitance(Ciss)715pF
TypeP-Channel

Technical details

60V 10A 2.5V 25W 100mΩ@10V 1 P-Channel P-Channel TO-252-3L Single FETs, MOSFETs RoHS

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