Tritech-MOS TM10N10DF

Tritech-MOS · FETs & Power MOSFETs · MPN TM10N10DF

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Specifications

Gate Charge(Qg)8.8nC
Drain to Source Voltage100V
Output Capacitance(Coss)56pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.514nF
Vgs±20V

Technical details

N-Channel 100V Surface Mount PDFN3X3-8L

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