Tritech-MOS TM10N06SI

Tritech-MOS · FETs & Power MOSFETs · MPN TM10N06SI

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)49pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation4W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)40mΩ@10V;47mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)725pF
TypeN-Channel

Technical details

N-Channel 60V 10A 4W Surface Mount SOT-89-3L

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