Tritech-MOS TM10H02S

Tritech-MOS · FETs & Power MOSFETs · MPN TM10H02S

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Specifications

Gate Charge(Qg)10.5nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))450mV
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)13mΩ
Number2 N-Channel
Input Capacitance(Ciss)700pF

Technical details

20V 10A 450mV 13mΩ 2 N-Channel SOP-8 Single FETs, MOSFETs RoHS

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