Tritech-MOS TM10G04S

Tritech-MOS · FETs & Power MOSFETs · MPN TM10G04S

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Specifications

Gate Charge(Qg)5.5nC;11.5nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)9.8A;7.5A
Output Capacitance(Coss)76pF;134pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.75V;2.5V
Pd - Power Dissipation1.67W
Reverse Transfer Capacitance (Crss@Vds)56pF;102pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)593pF;1.415nF
TypeN-Channel + P-Channel

Technical details

40V 1.67W 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS

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