Tritech-MOS TM100P03D

Tritech-MOS · FETs & Power MOSFETs · MPN TM100P03D

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Specifications

Gate Charge(Qg)146nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)695pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)580pF
RDS(on)3.6mΩ@10V;5.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)5.27nF
TypeP-Channel

Technical details

P-Channel 30V 100A 60W Surface Mount TO-252-3L

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