Tritech-MOS TM100N04AD

Tritech-MOS · FETs & Power MOSFETs · MPN TM100N04AD

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)188pF
Current - Continuous Drain(Id)100A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)5.2mΩ@10V;6.7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.18nF
TypeN-Channel

Technical details

N-Channel 40V 100A Surface Mount TO-252-3L

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