Tritech-MOS TM08H02S

Tritech-MOS · FETs & Power MOSFETs · MPN TM08H02S

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Specifications

Gate Charge(Qg)5.6nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)58.5pF
RDS(on)20mΩ
Number2 N-Channel
Input Capacitance(Ciss)358pF

Technical details

20V 8A 400mV 20mΩ 2 N-Channel SOP-8 Single FETs, MOSFETs RoHS

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