Tritech-MOS TM08G04S

Tritech-MOS · FETs & Power MOSFETs · MPN TM08G04S

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Specifications

Gate Charge(Qg)5.5nC@4.5V;15.8nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)76pF;160pF
Current - Continuous Drain(Id)8A;7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
RDS(on)24mΩ@10V;35mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)56pF;100pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)593pF;1nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 40V Surface Mount SOP-8

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