Tritech-MOS TM06G02S

Tritech-MOS · FETs & Power MOSFETs · MPN TM06G02S

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)5.6nC@4.5V;4.1nC@4.5V
Current - Continuous Drain(Id)6A;5A
Output Capacitance(Coss)69.3pF;67pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation-
RDS(on)21mΩ@4.5V;52mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)58.5pF;58pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)358pF;503pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array Surface Mount SOP-8L

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