Tritech-MOS TM04N10MI

Tritech-MOS · FETs & Power MOSFETs · MPN TM04N10MI

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Specifications

Gate Charge(Qg)4.3nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)29pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.2W
RDS(on)110mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.4pF
Number1 N-channel
Input Capacitance(Ciss)206pF
TypeN-Channel

Technical details

N-Channel 100V Surface Mount SOT-23-3L

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