Tritech-MOS · FETs & Power MOSFETs · MPN TM04G03MI6
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| Gate Charge(Qg) | 3nC@10V;7.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V;30V |
| Output Capacitance(Coss) | 44pF;47pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.5W;2.08W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF;38pF |
| RDS(on) | 29mΩ@10V;53mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 233pF;393pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel 30V 4A 2.08W Surface Mount SOT-23-6L