Tritech-MOS TM03N10AI

Tritech-MOS · FETs & Power MOSFETs · MPN TM03N10AI

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Specifications

Gate Charge(Qg)5.3nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)200mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)440pF
TypeN-Channel

Technical details

N-Channel 100V Surface Mount SOT-23

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