TOSHIBA · FETs & Power MOSFETs · MPN XPQ1R004PB,LXHQ
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| Gate Charge(Qg) | 84nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 200A |
| Output Capacitance(Coss) | 3.68nF |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 230W |
| RDS(on) | 1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 680pF |
| Input Capacitance(Ciss) | 6.89nF |
| Type | N-Channel |
40V 200A 3V 230W 1mΩ@10V N-Channel Single FETs, MOSFETs RoHS