TOSHIBA · FETs & Power MOSFETs · MPN XPN9R614MC,L1XHQ
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| Gate Charge(Qg) | 64nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 40A |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 840mW;100W |
| RDS(on) | 9.6mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3nF |
40V 40A 2.1V 9.6mΩ@10V 1 P-Channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS