TOSHIBA · FETs & Power MOSFETs · MPN XPN3R804NC,L1XHQ
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 40A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 840mW;100W |
| RDS(on) | 3.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.23nF |
40V 40A 2.5V 3.8mΩ@10V 1 N-channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS