TOSHIBA · FETs & Power MOSFETs · MPN XPN12006NC,L1XHQ
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
1 N-channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS