TOSHIBA · FETs & Power MOSFETs · MPN XPH6R30ANB,L1XHQ
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| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.27nF |
| Current - Continuous Drain(Id) | 45A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 132W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 5.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.24nF |
| Type | N-Channel |
N-Channel 100V 45A 132W Surface Mount SOIC-8-5mm