TOSHIBA · FETs & Power MOSFETs · MPN XPH4R714MC,L1XHQ
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| Output Capacitance(Coss) | 830pF |
|---|---|
| Pd - Power Dissipation | 960mW;132W |
| Configuration | - |
| Gate Charge(Qg) | 140nC |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Reverse Transfer Capacitance (Crss@Vds) | 685pF |
| RDS(on) | 3.6mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.64nF |
40V 60A 2.1V 3.6mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS