TOSHIBA · FETs & Power MOSFETs · MPN XPH4R10ANB,L1XHQ
No reviews yet — be the first to review TOSHIBA XPH4R10ANB,L1XHQ.
| Gate Charge(Qg) | 75nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 70A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 960mW;170W |
| RDS(on) | 4.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.97nF |
100V 70A 3.5V 4.1mΩ@10V 1 N-channel SOIC-8-5mm Single FETs, MOSFETs RoHS