TOSHIBA · FETs & Power MOSFETs · MPN XPH3R114MC,L1XHQ
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| Gate Charge(Qg) | 230nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.25nF |
| Current - Continuous Drain(Id) | 100A |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 960mW;170W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.11nF |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 9.5nF |
| Type | P-Channel |
P-Channel 40V 100A 960mW 170W Surface Mount SOP-8