TOSHIBA · FETs & Power MOSFETs · MPN XPH2R106NC,L1XHQ
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| Gate Charge(Qg) | 104nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 110A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 960mW;170W |
| RDS(on) | 2.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.9nF |
60V 110A 2.5V 2.1mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS