TOSHIBA · FETs & Power MOSFETs · MPN XK1R9F10QB,LXGQ
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| Gate Charge(Qg) | 184nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 160A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 375W |
| RDS(on) | 1.92mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.5nF |
100V 160A 3.5V 375W 1.92mΩ@10V 1 N-channel TO-220SM(W) Single FETs, MOSFETs RoHS