TOSHIBA TW140N120C,S1F

TOSHIBA · FETs & Power MOSFETs · MPN TW140N120C,S1F

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Specifications

Gate Charge(Qg)24nC@18V
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation107W
RDS(on)182mΩ@18V
Number1 N-channel
Input Capacitance(Ciss)691pF

Technical details

1.2kV 20A 5V 107W 182mΩ@18V 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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