TOSHIBA · FETs & Power MOSFETs · MPN TW107Z65C,S1F
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 21nC@18V |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 76W |
| RDS(on) | 152mΩ@18V |
| Type | N-Channel |
650V 20A 5V 76W 152mΩ@18V N-Channel Single FETs, MOSFETs RoHS