TOSHIBA · FETs & Power MOSFETs · MPN TW107N65C,S1F
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| Gate Charge(Qg) | 21nC@18V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 76W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
650V 20A 5V 76W 1 N-channel TO-247 Single FETs, MOSFETs RoHS